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MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA18H1213G
BLOCK DIAGRAM
RoHS Compliance , 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO
DESCRIPTION The RA18H1213G is a 18-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 1.24- to 1.30-GHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES * Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V) * Pout>18W, T>20% @ VDD=12.5V, VGG=5V, Pin=200mW * Broadband Frequency Range: 1.24-1.30GHz * Low-Power Control Current IGG=1mA (typ) at VGG=5V * Module Size: 66 x 21 x 9.88 mm * Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power
2
3
1
4 5
1 2 3 4 5
RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case)
PACKAGE CODE: H2S
RoHS COMPLIANCE * RA18H1213G-101 is a RoHS compliant products. * RoHS compliance is indicate by the letter "G" after the Lot Marking. * This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever ,it applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts.
ORDERING INFORMATION: ORDER NUMBER RA18H1213G-101 SUPPLY FORM Antistatic tray, 10 modules/tray
RA18H1213G
MITSUBISHI ELECTRIC 1/8
24 Jan 2006
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANCE
RA18H1213G
RATING 17 6 300 30 -30 to +110 -40 to +110 UNIT V V mW W C C
MAXIMUM RATINGS (Tcase=+25C, unless otherwise specified)
SYMBOL PARAMETER VDD VGG Pin Pout Tcase(OP) Tstg Drain Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS VGG<5V, ZG=ZL=50 VDD<12.5V, Pin=0mW, ZG=ZL=50 f=1.24-1.30GHz, ZG=ZL=50 f=1.24-1.30GHz, ZG=ZL=50
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (Tcase=+25C, ZG=ZL=50, unless otherwise specified) SYMBOL PARAMETER
f Pout T 2fo in IGG Gp IMD3 IMD5 -- -- Frequency Range Output Power Total Efficiency 2
nd
CONDITIONS
MIN
1.24 18 20
TYP
MAX
1.30
UNIT
GHz W %
Harmonic
VDD=12.5V, VGG=5V, Pin=200mW
-30 3:1 1 -- mA dB -20 -25 No parasitic oscillation No degradation or destroy dBc dBc -- --
Input VSWR Gate Current Linear power gain
rd
VDD=12.5V, VGG=5V, Pin=10dBm
23
3 Inter Modulation Distortion VDD=12.5V, VGG=5V Delta f=f1-f2=10KHz th 5 Inter Modulation Distortion Pout=14W P.E.P. (Pin control) VDD=10.0-15.5V, Pin=0-25dBm, Stability Pout=1 to 18W (VGG control), Load VSWR=3:1 VDD=15.2V, Pin=200mW, Load VSWR Tolerance Pout=18W (VGG control), Load VSWR=8:1
All parameters, conditions, ratings, and limits are subject to change without notice.
RA18H1213G
MITSUBISHI ELECTRIC 2/8
24 Jan 2006
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANCE
RA18H1213G
TYPICAL PERFORMANCE (Tcase=+25C, ZG=ZL=50, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY, and INPUT VSWR versus FREQUENCY
40 OUTPUT POWER Pout(W) INPUT VSWR in (-)
Pout VDD=12.5V VGG=5V Pin=200mW
2nd, 3 HARMONICS versus FREQUENCY
-20 HARMONICS (dBc) -30 -40 -50 -60 -70 1220
3nd
rd
rd
80 70
30
60 50 TOTAL EFFICIENCY T(%)
VDD=12.5V VGG=5V Pin=200mW
20
T
40 30 20
2
10
in
10 0 1320
0 1220
1240 1260 1280 1300 FREQUENCY f(MHz)
1240 1260 1280 1300 FREQUENCY f(MHz)
1320
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
50 OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) 40 30 20 10 0 0 5 10 15 20 25 INPUT POWER Pin(dBm)
Gp Pout
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
50 DRAIN CURRENT IDD(A) OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) 40 30 20 10 0 0 5 10 15
IDD
f=1270MHz, VDD=12.5V, VGG=5V Pout Gp
10 8 6 4
f=1240MHz, VDD=12.5V, VGG=5V
10 8 6 4 2 0 DRAIN CURRENT IDD(A) DRAIN CURRENT IDD(A) DRAIN CURRENT IDD(A)
IDD
2 0
20
25
INPUT POWER Pin(dBm)
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
50 OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) 40 30 20
IDD
Pout Gp
OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE
50 OUTPUT POWER Pout(W) DRAIN CURRENT IDD(A) 40 30 20 10 0 6 8 10 12 14 DRAIN VOLTAGE VDD(V) 16
Pout f=1240MHz, VGG=5V, Pin=200mW
10 8 6 4
f=1300MHz, VDD=12.5V, VGG=5V
10
IDD
8 6 4 2 0
10 0 0 5 10 15
2 0
20
25
INPUT POWER Pin(dBm)
OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE
50 OUTPUT POWER Pout(W) 40 30 20 10 0 6 8 10 12 14 DRAIN VOLTAGE VDD(V) 16
Pout f=1270MHz, VGG=5V, Pin=200mW
OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE
10 OUTPUT POWER Pout(W) 50 DRAIN CURRENT IDD(A) 40 30 20 10 0 6 8 10 12 14 DRAIN VOLTAGE VDD(V) 16
Pout f=1300MHz, VGG=5V, Pin=200mW
10
IDD
IDD
8 6 4 2 0
8 6 4 2 0
RA18H1213G
MITSUBISHI ELECTRIC 3/8
24 Jan 2006
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANCE
RA18H1213G
TYPICAL PERFORMANCE (Tcase=+25C, ZG=ZL=50, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE
60 OUTPUT POWER P out(W) 50 40 30 20 10 0 3 3.5 4 4.5 5 5.5 GATE VOLTAGE VGG(V) 6
f=1240MHz, VDD=12.5V, Pin=200mW
OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE
60 OUTPUT POWER P out(W) DRAIN CURRENT I DD(A) 50 40 30 20 10 0 3 3.5 4 4.5 5 5.5 GATE VOLTAGE VGG(V) 6
f=1270MHz, VDD=12.5V, Pin=200mW
12 10
IDD
Pout
12
IDD
Pout
8 6 4 2 0
8 6 4 2 0
OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE
60 OUTPUT POWER P out(W) 50 40 30 20 10 0 3 3.5 4 4.5 5 5.5 GATE VOLTAGE VGG(V) 6
f=1300MHz, VDD=12.5V, Pin=200mW
3rd,5th.INTERMODULATION DISTORTIN versus OUTPUT POWER CHARACTERISTICS
-20 DRAIN CURRENT I DD(A)
f=1240MHz VDD=12.5V VGG=5V
12 10
IDD
Pout
IMD3,IMD5 (dBc)
-30
8 6 4 2 0
IMD3 IMD5
-40
-50
-60 26 28 30 32 34 36 38 40 42 OUTPUT POWER(dBm P.E.P.) 44
3rd,5th.INTERMODULATION DISTORTIN versus OUTPUT POWER CHARACTERISTICS
-20
f=1270MHz VDD=12.5V VGG=5V IMD3 IMD5
3rd,5th.INTERMODULATION DISTORTIN versus OUTPUT POWER CHARACTERISTICS
-20
f=1300MHz VDD=12.5V VGG=5V IMD3
IMD3,IMD5 (dBc)
-40
IMD3,IMD5 (dBc)
-30
-30
-40
IMD5
-50
-50
-60 26 28 30 32 34 36 38 40 42 OUTPUT POWER(dBm P.E.P.) 44
-60 26 28 30 32 34 36 38 40 42 OUTPUT POWER(dBm P.E.P.) 44
RA18H1213G
MITSUBISHI ELECTRIC 4/8
DRAIN CURRENT I DD(A)
10
24 Jan 2006
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANCE
RA18H1213G
OUTLINE DRAWING (mm)
66.0 0.5 3.0 0.3 7.25 0.8 60.0 0.5 51.5 0.5 2-R2 0.5
21.0 0.5
9.5 0.5
5 1 2 3 4
14.0 1
2.0 0.5
O0.45 0.15
12.0 1 16.5 1 43.5 1 55.5 1
3.1 +0.6/-0.4
0.09 0.02
7.5 0.5 (50.4) 2.3 0.3
4.0 0.3 (9.88)
RA18H1213G
MITSUBISHI ELECTRIC 5/8
17.0 0.5
1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case)
24 Jan 2006
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANCE
RA18H1213G
TEST BLOCK DIAGRAM
Power Meter 1 2
DUT
3 4
5
Spectrum Analyzer
Signal Generator
Attenuator
Preamplifier
Attenuator
Directional Coupler
ZG=50
ZL=50
Directional Coupler
Attenuator
Power Meter
C1
C2
+ DC Power Supply VGG C1, C2: 4700pF, 22uF in parallel
+ DC Power Supply VDD
1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case)
EQUIVALENT CIRCUIT
2
3
1 4 5
RA18H1213G
MITSUBISHI ELECTRIC 6/8
24 Jan 2006
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANCE
RA18H1213G
PRECAUTIONS, RECOMMENDATIONS, and APPLICATION INFORMATION: Construction: This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic cap is attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits. Wire leads soldered onto the alumina substrate provide the DC and RF connection. Following conditions must be avoided: a) Bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes) b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion) c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene) d) Frequent on/off switching that causes thermal expansion of the resin e) ESD, surge, overvoltage in combination with load VSWR, and oscillation ESD: This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required. Mounting: Heat sink flatness must be less than 50 m (a heat sink that is not flat or particles between module and heat sink may cause the ceramic substrate in the module to crack by bending forces, either immediately when driving screws or later when thermal expansion forces are added). A thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce the bending stress on the ceramic substrate caused by the temperature difference to the heat sink. The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board. M3 screws are recommended with a tightening torque of 0.4 to 0.6 Nm. Soldering and Defluxing: This module is designed for manual soldering. The leads must be soldered after the module is screwed onto the heat sink. The temperature of the lead (terminal) soldering should be lower than 350C and shorter than 3 second. Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink: At Pout=18W, VDD=12.5V and Pin=200mW each stage transistor operating conditions are: IDD @ T=20% VDD Pout Rth(ch-case) Pin Stage (W) (W) (V) (C/W) (A) 1st 0.2 1.3 23.0 0.20 12.5 2nd 1.3 6.0 3.2 2.10 rd 3 6.0 18.0 1.6 4.70 The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are: Tch1 = Tcase + (12.5V x 0.20A - 1.3W + 0.2W) x 23.0C/W = Tcase + 32.2C = Tcase + 69.0 C Tch2 = Tcase + (12.5V x 2.10A - 6.0W + 1.3W) x 3.2C/W Tch3 = Tcase + (12.5V x 4.70A - 18.0W + 6.0W) x 1.6C/W = Tcase + 74.8 C For long-term reliability, it is best to keep the module case temperature (Tcase) below 90C. For an ambient temperature Tair=60C and Pout=18W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / T ) Pout + Pin ) of the heat sink, including the contact resistance, is: Rth(case-air) = (90C - 60C) / (18W/20% - 18W + 0.2W) = 0.42 C/W When mounting the module with the thermal resistance of 0.42 C/W, the channel temperature of each stage transistor is: Tch1 = Tair + 62.2 C Tch2 = Tair + 99.0 C Tch3 = Tair + 104.8 C The 175C maximum rating for the channel temperature ensures application under derated conditions.
RA18H1213G
MITSUBISHI ELECTRIC 7/8
24 Jan 2006
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANCE
RA18H1213G
Output Power Control: Depending on linearity, the following two methods are recommended to control the output power: a) Non-linear FM modulation: By the gate voltage (VGG). When the gate voltage is close to zero, the RF input signal is attenuated up to 60 dB and only a small leakage current flows from the battery into the drain. Around VGG=4V, the output power and drain current increases substantially. Around VGG=4.5V (typical) to VGG=5V (maximum), the nominal output power becomes available. b) Linear AM modulation: By RF input power Pin. The gate voltage is used to set the drain's quiescent current for the required linearity. Oscillation: To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pF chip capacitor, located close to the module, and a 22 F (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation, the following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module? b) Is the load impedance ZL=50? c) Is the source impedance ZG=50? Frequent on/off switching: In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally induced mechanical stress. Quality: Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions exceeding those of mobile radios. This module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout, which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures are found.
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or mishap.
RA18H1213G
MITSUBISHI ELECTRIC 8/8
24 Jan 2006

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